Title :
A new substrate engineering for the formation of empty space in silicon (ESS) induced by silicon surface migration
Author :
Sato, T. ; Aoki, N. ; Mizushima, I. ; Tsunashima, Y.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
A new technique to form empty spaces in silicon substrates is presented. The empty space with various shapes, such as plate as well as sphere and pipe, could be formed under the surface of the silicon substrate.
Keywords :
elemental semiconductors; silicon; substrates; Si; empty space in silicon; silicon substrate; silicon surface migration; substrate engineering; Air gaps; Annealing; Electronic switching systems; Laboratories; Lattices; MOS devices; Microelectronics; Shape; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824206
