Title :
A high-dynamic range SiGe low-noise amplifier for X-band radar applications
Author :
Kalyoncu, I. ; Dinc, Tolga ; Gurbuz, Yasar
Author_Institution :
Fac. of Eng. & Natural Sci. (FENS), Sabanci Univ., Istanbul, Turkey
Abstract :
In this paper, we present a high-dynamic range (HDR) LNA in 0.25-μm SiGe BiCMOS technology, aiming for X-band radar applications. LNA is designed in two-stages and each stage is a cascode topology using HBTs. First stage is optimized for noise performance while second stage is optimized for high output power. LNA design includes inductive degeneration and optimization of transistor sizes for simultaneous input noise-power match, wide-band input-output matching, DC bias circuitry to increase linearity, inter-stage matching optimized for gain flatness, etc. In 8.5-11.5 GHz band, the LNA achieves 24-27 dB flat gain, 1.6-1.65 dB noise figure, better than 15 dB input-output return loss, 16 dBm output P1dB and 24.7 dBm OIP3 using 1.3×0.9 mm2 chip area including bond pads, with a power consumption of 115 mW.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; field effect MMIC; heterojunction bipolar transistors; low noise amplifiers; microwave bipolar transistors; BiCMOS technology; DC bias circuitry; HBT; HDR LNA; SiGe; X-band radar applications; cascode topology; frequency 8.5 GHz to 11.5 GHz; gain 24 dB to 27 dB; high-dynamic range low-noise amplifier; inductive degeneration; input noise-power match; interstage matching; loss 15 dB; noise figure 1.6 dB to 1.65 dB; power 115 mW; size 0.25 mum; transistor size optimization; wide-band input-output matching; Gain; Heterojunction bipolar transistors; Impedance matching; Linearity; Noise; Noise figure; Silicon germanium; Low-noise amplifiers; dynamic range; heterojunction bipolar transistors; linearity; noise figure; phased arrays; silicon germanium;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
