DocumentCode :
1644087
Title :
A 10-bit area-efficient SAR ADC with re-usable capacitive array
Author :
Li, Chung-Yi ; Lu, Chih-Wen ; Chao, Hao-Tsun ; Hsia, Chin
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2012
Firstpage :
1
Lastpage :
5
Abstract :
In this paper, an area-efficient successive approximation register (SAR) analog-to-digital converter (ADC) with a dithering Vref is proposed. It reuses the capacitive array with the reconfiguration of Vref to Vref ± ΔV for reducing dramatically the ADC´s area. The 2n resolution is achieved by the n bit SAR-ADC. To verify the proposed scheme, the proposed SAR ADC is implemented in a TSMC 0.18 μm 1P6M CMOS process with a supply voltage of 1.8V. The simulation results show that the capacitor area is reduced by 96% compared with the conventional 10-bit SAR-ADC. The ENOB of the proposed architecture is 9.767 bit when operating at 14MS/s.
Keywords :
CMOS integrated circuits; analogue-digital conversion; ENOB; SAR ADC; TSMC 1P6M CMOS process; analog-to-digital converter; area-efficient successive approximation register; reusable capacitive array; size 0.18 mum; voltage 1.8 V; word length 10 bit; word length 9.767 bit; Architecture; Arrays; Capacitors; Electronic mail; Pipelines; Solid state circuits; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Anti-Counterfeiting, Security and Identification (ASID), 2012 International Conference on
Conference_Location :
Taipei
ISSN :
2163-5048
Print_ISBN :
978-1-4673-2144-0
Electronic_ISBN :
2163-5048
Type :
conf
DOI :
10.1109/ICASID.2012.6325302
Filename :
6325302
Link To Document :
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