Title :
Physics-based analysis of RF performance of small geometry MOSFETs: methodology and application to the evaluation of the effects of scaling
Author_Institution :
Dept. of Eng., Ferrara Univ., Italy
Abstract :
This paper discusses the issue of physics-based analysis of RF MOSFETs´ performance and proposes a simple approach that makes use of DC simulations for the estimation of the main RF figures of merit. The approach is validated versus distributed AC analysis and applications are reported in order to discuss transit time effects in MOSFETs and the trends connected to geometry scaling. Projections of the impact of scaling on the performance of low-noise amplifiers are provided.
Keywords :
MOSFET; carrier lifetime; circuit simulation; radiofrequency amplifiers; semiconductor device models; DC simulations; RF figures of merit; RF performance; distributed AC analysis; drift diffusion; low-noise amplifiers; physics-based analysis; quasi-static charge control model; scaling effects; small geometry MOSFET; transit time effects; Analytical models; Delay; FETs; Geometry; High definition video; Low-noise amplifiers; MOSFETs; Performance analysis; Radio frequency; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824212
