Title :
Performance limits of silicon MOSFET´s
Author :
Assad, F. ; Zhibin Ren ; Datta, S. ; Lundstrom, M. ; Bendix, P.
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
A procedure for comparing the current vs. voltage characteristics of MOSFETs against their upper limits is described, and a 0.35 /spl mu/m n-MOS technology is assessed. Channel back-scattering coefficients for this technology are deduced where we show that the on-current performance is /spl sim/45% of its upper limit. We also show that conventional device scaling maintains approximately the same level of device performance, and we discuss the implications for the ITRS on-current performance targets. Finally, we compare the upper limit performance of a p-channel vs. an n-channel MOSFET technology.
Keywords :
MOSFET; elemental semiconductors; silicon; 0.35 micron; Si; channel backscattering coefficient; current-voltage characteristics; device scaling; n-channel technology; p-channel technology; silicon MOSFET; CMOS technology; Doping profiles; Electrical resistance measurement; Equations; Large scale integration; Logic; MOSFET circuits; Semiconductor process modeling; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824213
