A 0.2-/spl mu/m self-aligned SiGe HBT featuring 107-GHz f/sub max/ and 6.7-ps ECL

Author

Washio, K. ; Kondo, M. ; Ohue, E. ; Oda, K. ; Hayami, R. ; Tanabe, M. ; Shimamoto, H. ; Harada, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1999

Firstpage

557

Lastpage

560

Abstract

A 0.2-/spl mu/m self-aligned selective-epitaxial-growth (SEG) SiGe heterojunction bipolar transistor (HBT), with shallow-trench and dual-deep-trench isolations and Ti-salicide electrodes, was developed. The process, except the SEG, is almost completely compatible with well-established BiCMOS technology. The SiGe HBTs exhibited a peak maximum oscillation frequency of 107 GHz and an ECL gate delay time of 6.7 ps. Four-level interconnects, including MIM-capacitors and high-Q inductors, were formed by chemical mechanical polishing.

Keywords

Ge-Si alloys; MIM devices; chemical mechanical polishing; heterojunction bipolar transistors; isolation technology; microwave bipolar transistors; semiconductor device metallisation; semiconductor materials; 0.2 micron; 107 GHz; 6.7 ps; BiCMOS technology; MIM-capacitors; SiGe; chemical mechanical polishing; dual-deep-trench isolation; four-level interconnects; gate delay time; high-Q inductors; maximum oscillation frequency; salicide electrodes; selective-epitaxial-growth device; self-aligned HBT; shallow-trench isolation; BiCMOS integrated circuits; Chemical technology; Delay effects; Electrodes; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Isolation technology; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824215

Filename

824215