High transconductance on AlGaN/GaN HEMT on (110) silicon substrate

Author

Gerbedoen, J. ; Soltani, Ali ; De Jaeger, J.-C. ; Yvon, C.

Author_Institution

IEMN (Inst. d´Electron., de Microelectron. et de Nanotechnol.), Villeneuve-d´Ascq, France

fYear

2012

Firstpage

413

Lastpage

416

Abstract

AlGaN/GaN HEMT was grown on (110)-oriented silicon substrate. These new transistors are fabricated with unrecessed T-shaped 45nm gate length, to simplify the process and are based on a three layer resist. The technology is similar to those used for devices on Si (111) substrate. A transconductance as high as 455mS/mm and a maximum drain-source current saturation of 1.36A.mm^-1 at V_GS=0V are obtained. Current gain transition frequency and maximum frequency oscillation of 63GHz and 106GHz respectively are also measured. These results are very promising for this new line of components.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; resists; semiconductor growth; silicon; wide band gap semiconductors; AlGaN-GaN; HEMT; Si; current gain transition frequency; frequency 106 GHz; frequency 63 GHz; high transconductance; maximum frequency oscillation; silicon substrate; size 45 nm; three layer resist; unrecessed T-shaped gate length; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Passivation; Silicon; Substrates; (110) Silicon; HEMT GaN; High transconductance; RF performance; T-gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483824