DocumentCode :
1644308
Title :
A 91 to 110-GHz tapered constructive wave power amplifier in a 0.12µm SiGe BiCMOS process
Author :
Kalantari, Nader ; Buckwalter, James F.
Author_Institution :
Univ. of California-San Diego, La Jolla, CA, USA
fYear :
2010
Firstpage :
125
Lastpage :
128
Abstract :
A W-band, tapered constructive wave power amplifier (TCWPA) has been designed and fabricated in a 0.12 μm SiGe BiCMOS technology. The amplifier has a 3 dB BW of 19 GHz from 91-110 GHz and a maximum gain of 12.5 dB at 101 GHz. At 98 GHz, OP1dB is 4.9 dBm. At 97 GHz, Psat is 5.9 dBm and the PAE is 7.2%. The amplifier operates from a 2.4 V supply and occupies an area of 0.22 mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; BiCMOS process; SiGe; bandwidth 19 GHz; efficiency 7.2 percent; frequency 91 GHz to 110 GHz; gain 12.5 dB; size 0.12 mum; tapered constructive wave power amplifier; voltage 2.4 V; Feedback circuits; Gain; Linearity; Power generation; Power transmission lines; Resistors; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
ISSN :
1088-9299
Print_ISBN :
978-1-4244-8578-9
Type :
conf
DOI :
10.1109/BIPOL.2010.5667917
Filename :
5667917
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1644308
بازگشت