Title :
Improvement of Fabrication Technology for InP Gunn Devices Using Trench Method
Author :
Kim, M.R. ; Lee, S.D. ; Lee, J.S. ; Kwak, N.S. ; Kim, S.D. ; Rhee, J.K.
Author_Institution :
Millimeter-wave INnovation Technol. Res. Center, Dongguk Univ., Seoul
Abstract :
We have fabricated InP Gunn diodes using the improved fabrication technology in order to eliminate the problems resulting from the fabrication procedure of InP Gunn diodes for operation at 94 GHz. We see that the developed fabrication procedure using the trench method reduces the stress in InP epi-layers during alloy, and therefore the cracks in epi-layers were reduced.
Keywords :
Gunn diodes; III-V semiconductors; indium compounds; isolation technology; millimetre wave diodes; semiconductor epitaxial layers; Gunn diodes; InP; epilayer crack reduction; fabrication technology; frequency 94 GHz; stress reduction; trench method; Cathodes; Diodes; Fabrication; Frequency; Gallium arsenide; Gold; Gunn devices; Indium phosphide; Millimeter wave technology; Wet etching;
Conference_Titel :
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1885-5
Electronic_ISBN :
978-1-4244-1886-2
DOI :
10.1109/GSMM.2008.4534546
