High-efficiency uni-traveling-carrier photodiode with an integrated total-reflection mirror

Author

Ito, H. ; Furuta, T. ; Kodama, S. ; Ishibashi, T.

Author_Institution

NTT Photonics Lab., Kanagawa, Japan

fYear

1999

Firstpage

583

Lastpage

586

Abstract

A novel photodiode structure with an integrated total-reflection mirror which can enhance the quantum efficiency in back-illuminated geometry is proposed. Due to the diagonal propagation of the reflected light at the total-reflection mirror through the absorption layer, the efficiency is improved by about 50% from that of the normally irradiated case. By employing a uni-traveling-carrier structure together with a thick absorption layer of 4700 A, the fabricated PD exhibits a high responsivity of 0.65 A/W, a high 3-dB bandwidth of 50 GHz, and a high output voltage of 5 V, simultaneously.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; mirrors; photodetectors; photodiodes; 3-dB bandwidth; 4700 angstrom; 5 V; 50 GHz; InGaAs-InGaAsP-InP; InP; InP substrate; absorption layer thickness; back-illuminated geometry; high responsivity; integrated total-reflection mirror; output voltage; photodiode structure; quantum efficiency enhancement; reflected light diagonal propagation; ultrafast photodetectors; uni-traveling-carrier photodiode; Absorption; Bandwidth; Geometry; Indium phosphide; Mirrors; Optical propagation; Optical reflection; Optical refraction; Photodiodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824221

Filename

824221