Title :
Patterned 1.54 /spl mu/m vertical cavity laser with mismatched defect-free mirrors
Author :
Qasaimeh, O. ; Gebretsadik, H. ; Bhattacharya, P. ; Caneau, C. ; Bhat, R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Novel 1.54 /spl mu/m InP-based vertical cavity surface-emitting lasers have been realized with defect-free patterned GaAs/AlGaAs mirrors. Lasers were designed with InP/InGaAsP bottom mirrors, a strain compensated InGaAsP quantum well active region, an InAlAs-oxide current confinement layer and short-stack oxidized GaAs/AlGaAs top DBR mirrors. Threshold current as low as 5 mA is obtained at 15/spl deg/C for an 8 /spl mu/m diameter laser, and up to 60 /spl mu/W of light output is recorded.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser mirrors; quantum well lasers; surface emitting lasers; 1.54 mum; 15 C; 5 mA; 60 muW; 8 mum; GaAs-AlGaAs; InAlAs-oxide current confinement layer; InAlAsO; InP-InGaAsP; InP-based vertical cavity surface-emitting lasers; InP/InGaAsP bottom mirrors; InP/InGaAsP patterned 1.54 /spl mu/m VCSEL; defect-free patterned GaAs/AlGaAs mirrors; light output power; mismatched defect-free mirrors; room temperature electrically pumped lasing; short-stack oxidized GaAs/AlGaAs top DBR mirrors; strain compensated InGaAsP quantum well active region; threshold current; wafer scale fabrication; Capacitive sensors; Distributed Bragg reflectors; Gallium arsenide; Indium phosphide; Mirrors; Optical design; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824224
