Title :
An investigation of collector-base transport in SiGe HBTs designed for half-Terahertz speeds
Author :
Yuan, Jiahui ; Cressler, John D. ; Moen, Kurt A. ; Chakraborty, Partha S.
Author_Institution :
Sch. of ECE, Georgia Tech, Atlanta, GA, USA
Abstract :
A new method is introduced to investigate electron transport in the collector-base space charge region of SiGe HBTs designed for half-Terahertz speeds. Using commercially-available Monte Carlo and hydrodynamic TCAD tools, one can eliminate the fundamental limitations of hydrodynamic models related to velocity overshoot and impact ionization. The method is verified in a 200-GHz SiGe technology and then applied to hypothetical 350-GHz and half-THz (500 GHz) SiGe HBTs. This new approach requires far less computational complexity than classical Monte Carlo tools.
Keywords :
Ge-Si alloys; Monte Carlo methods; computational complexity; heterojunction bipolar transistors; hydrodynamics; technology CAD (electronics); HBT; Monte Carlo tool; collector-base space charge region; collector-base transport; computational complexity; electron transport; frequency 200 GHz; frequency 350 GHz; frequency 500 GHz; half-terahertz speed; hydrodynamic TCAD tool; impact ionization; Heterojunction bipolar transistors; High definition video; Impact ionization; Integrated circuit modeling; Mathematical model; Monte Carlo methods; Silicon germanium; Device scaling; Monte Carlo; SiGe; electron transport; heterojunction bipolar transistor (HBT); hydrodynamics; impact ionization; silicon-germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667925
