Title :
High power handling low-voltage RF MEMS switched capacitors
Author :
Stefanini, Romain ; Guines, Cyril ; Barriere, F. ; Lemoine, Emilien ; Blondy, Pierre
Author_Institution :
AirMeMs, Limoges, France
Abstract :
A new topology of high power handling RF MEMS switched capacitor is presented in this paper. The design has been optimized in order to get low sensitivity to mechanic stress and temperature while keeping a low pull-down voltage (17 V). Two MEMS switched capacitors have been fabricated in back-to-back configuration and results in a Cup=92 fF and Cdown=260 fF. The IP1 and the hold down power of the device have been measured at 3 GHz and are respectively 2.8 and 3.3 W. A 2 bit array with higher capacitance values (270-610 fF) is also fabricated. Reliability measurements are presented and show a pull-in voltage variation of 5 V after 3.75 hours hold in the downstate position.
Keywords :
low-power electronics; micromechanical devices; reliability; switched capacitor networks; temperature; back-to-back configuration; capacitance 270 fF to 610 fF; capacitance values; frequency 3 GHz; high power handling RF MEMS switched capacitor; high power handling low-voltage RF MEMS switched capacitors; hold down power; low pull-down voltage; mechanic stress; power 2.8 W to 3.3 W; pull-in voltage variation; reliability measurements; temperature; time 3.75 hour; voltage 5 V; Capacitors; Micromechanical devices; Radio frequency; Stress; Switches; Temperature sensors; Voltage measurement; RF MEMS; power handling; reliability; stress; switched capacitor;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
