DocumentCode
1644556
Title
Comparison of Dot Schottky and MHEMT Diodes for 94 GHz Mixer Applications
Author
Bang, Seok Ho ; Lee, Sang Jin ; Lee, Mun Kyo ; Ko, Dong Sik ; Moon, Sung-Woon ; Baek, Yong Hyun ; Han, Min ; Choi, Seok Gyu ; Baek, Tae Jong ; Jun, Byoung-Chul ; Park, Dong Chul ; Kim, Sam-Dong ; Rhee, Jin Koo
Author_Institution
Millimeter-wave Innovation Technol. Res. Center (MINT), Dongguk Univ., Seoul
fYear
2008
Firstpage
52
Lastpage
55
Abstract
In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Omega, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.
Keywords
III-V semiconductors; Schottky diode mixers; Schottky diodes; gallium arsenide; high electron mobility transistors; GaAs; MHEMT diodes; Schottky diodes; frequency 94 GHz; mixer applications; Anodes; Circuit simulation; Couplers; Fabrication; Gallium arsenide; HEMTs; Microwave devices; Radio frequency; Schottky diodes; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-1885-5
Electronic_ISBN
978-1-4244-1886-2
Type
conf
DOI
10.1109/GSMM.2008.4534555
Filename
4534555
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