Title :
Comparison of Dot Schottky and MHEMT Diodes for 94 GHz Mixer Applications
Author :
Bang, Seok Ho ; Lee, Sang Jin ; Lee, Mun Kyo ; Ko, Dong Sik ; Moon, Sung-Woon ; Baek, Yong Hyun ; Han, Min ; Choi, Seok Gyu ; Baek, Tae Jong ; Jun, Byoung-Chul ; Park, Dong Chul ; Kim, Sam-Dong ; Rhee, Jin Koo
Author_Institution :
Millimeter-wave Innovation Technol. Res. Center (MINT), Dongguk Univ., Seoul
Abstract :
In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Omega, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.
Keywords :
III-V semiconductors; Schottky diode mixers; Schottky diodes; gallium arsenide; high electron mobility transistors; GaAs; MHEMT diodes; Schottky diodes; frequency 94 GHz; mixer applications; Anodes; Circuit simulation; Couplers; Fabrication; Gallium arsenide; HEMTs; Microwave devices; Radio frequency; Schottky diodes; mHEMTs;
Conference_Titel :
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1885-5
Electronic_ISBN :
978-1-4244-1886-2
DOI :
10.1109/GSMM.2008.4534555
