DocumentCode
1644618
Title
Application of on-wafer calibration techniques for advanced high-speed BiCMOS technology
Author
Rumiantsev, A. ; Sakalas, P. ; Pourchon, F. ; Chevalier, P. ; Derrier, N. ; Schroter, M.
Author_Institution
Cascade Microtech Dresden GmbH, Sacka, Germany
fYear
2010
Firstpage
98
Lastpage
101
Abstract
On-wafer RF calibration methods are compared to the conventional Impedance Standard Substrate (ISS) calibration combined with a dummies de-embedding approach for transistors of an advanced BiCMOS process. We discuss the design of customized calibration standards addressing specifics of the silicon BiCMOS process. Our results show that on-wafer calibration methods are the most suitable approaches for accurate characterization of sub-THz SiGe HBT´s.
Keywords
electric breakdown; heterojunction bipolar transistors; silicon-on-insulator; DC current gain; bipolar transistors; breakdown characteristics; breakdown voltage; temperature dependence; temperature interaction; Calibration; Frequency measurement; Impedance; Impedance measurement; Microwave measurements; Silicon; Transistors; BiCMOS process technology; RF circuits; S-parameters; Silicon-germanium HBT; calibration;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location
Austin, TX
ISSN
1088-9299
Print_ISBN
978-1-4244-8578-9
Type
conf
DOI
10.1109/BIPOL.2010.5667929
Filename
5667929
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