Design and modeling of InP DHBT power amplifiers at millimeter-wave frequencies

Author

Lei Yan ; Johansen, Tom K.

Author_Institution

Dept. of Electr. Eng., Tech. Univ. of Denmark, Lyngby, Denmark

fYear

2012

Firstpage

476

Lastpage

479

Abstract

In this paper, the design and modeling of InP DHBT based millimeter-wave(mm-wave) power amplifiers is described. This includes the modeling of InP DHBT devices and layout parasitics. An EM-circuit co-simulation approach is described to allow all parasitics to be modeled for accurate circuit performance evaluation. A single-branch cascode based PA using single-finger InP DHBT devices shows a measured power gain of 9.2dB and a saturated output power of 12.3dBm at 67.2GHz. The output power at 1dB compression is 9.0dBm. A similar two-way combined cascode based PA using three-finger devices demonstrates a power gain of 4.5dB with a saturated output power of 14.2dBm at 69.2GHz.

Keywords

III-V semiconductors; electromagnetic devices; indium compounds; millimetre wave power amplifiers; DHBT based millimeter-wave power amplifiers; EM-circuit co-simulation approach; InP; circuit performance evaluation; frequency 67.2 GHz; gain 4.5 dB; layout parasitics; saturated output power; single-branch cascode; three-finger devices; Atmospheric measurements; Band-pass filters; Circuit faults; Particle measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483840