Title :
Base resistance distribution in bipolar transistors: Relevance to compact noise modeling and extraction from admittance parameters
Author :
Vitale, Francesco ; Pijper, Ralf ; Van der Toorn, Ramses
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron. (Dimes), Delft Univ. of Technol., Delft, Netherlands
Abstract :
We discuss the relevance of the distribution of the base resistance of planar bipolar transistors with respect to noise-and small-signal characteristics. We present analytical results for admittance parameters in terms of elements of the small-signal equivalent circuit of the Mextram compact model and discuss extraction of base resistance distribution parameters from measured admittance parameters for selected cases.
Keywords :
bipolar transistors; equivalent circuits; semiconductor device models; Mextram compact model; admittance parameters; base resistance distribution parameters extraction; bipolar transistors; compact noise modeling; small-signal equivalent circuit; Admittance; Current measurement; Electrical resistance measurement; Frequency measurement; Integrated circuit modeling; Noise; Resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667931
