CMOS large signal model for CAD

Author

Angelov, I. ; Fernhdal, M. ; Ingvarson, F. ; Zirath, H. ; Vickes, H.O.

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

2

fYear

2003

Firstpage

643

Abstract

A compact large-signal model for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter power spectrum measurements and load pull measurements. Very good correspondences between measurements on 100 nm CMOS FETs (f/sub T/ = 140 GHz, f/sub max/ =100 GHz) and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.

Keywords

CMOS integrated circuits; MOSFET; UHF field effect transistors; capacitance; circuit CAD; equivalent circuits; integrated circuit modelling; microwave field effect transistors; radiofrequency integrated circuits; semiconductor device models; 100 GHz; 100 nm; 140 GHz; CAD application; CMOS large signal model; RF circuits; S-parameter power spectrum measurements; compact model; load pull measurements; model convergence behavior; model equations; model parameters; nonlinear circuit simulation; Circuit simulation; Convergence; FETs; Frequency measurement; Nonlinear circuits; Nonlinear equations; Power measurement; Radio frequency; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212455

Filename

1212455