Title :
On the High Frequency de-embedding& modeling of FET devices
Author :
Angelov, I. ; Kanaya, K. ; Goto, S. ; Abbasi, M.
Author_Institution :
MEL MC-2, CHALMERS UNIV., Gotborg, Sweden
Abstract :
At millimetre wave frequencies, de-embedding techniques start to fail due to larger uncertainty in measurements. In this paper, various pads-transistor transitions are being analysed and measured. The usage of measurement versus simulation based characterisation of the embedding layout is evaluated. Applying suggested measuring, modelling extraction procedure, results up to 220 GHz are demonstrated.
Keywords :
measurement uncertainty; millimetre wave field effect transistors; FET devices; embedding layout; high frequency de-embedding; measurement uncertainty; millimetre wave frequencies; pads-transistor transitions; Distortion measurement; FETs; Frequency; Hazards; Microwave measurements; Passive networks; Reflection; Scattering parameters; Time domain analysis; Time measurement; FET; Microstrip; SS and LS Models;
Conference_Titel :
Microwave Measurement Conference, 2009 73rd ARFTG
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-3442-8
Electronic_ISBN :
978-1-4244-3443-5
DOI :
10.1109/ARFTG.2009.5278076
