DocumentCode
1644876
Title
On the High Frequency de-embedding& modeling of FET devices
Author
Angelov, I. ; Kanaya, K. ; Goto, S. ; Abbasi, M.
Author_Institution
MEL MC-2, CHALMERS UNIV., Gotborg, Sweden
fYear
2009
Firstpage
1
Lastpage
4
Abstract
At millimetre wave frequencies, de-embedding techniques start to fail due to larger uncertainty in measurements. In this paper, various pads-transistor transitions are being analysed and measured. The usage of measurement versus simulation based characterisation of the embedding layout is evaluated. Applying suggested measuring, modelling extraction procedure, results up to 220 GHz are demonstrated.
Keywords
measurement uncertainty; millimetre wave field effect transistors; FET devices; embedding layout; high frequency de-embedding; measurement uncertainty; millimetre wave frequencies; pads-transistor transitions; Distortion measurement; FETs; Frequency; Hazards; Microwave measurements; Passive networks; Reflection; Scattering parameters; Time domain analysis; Time measurement; FET; Microstrip; SS and LS Models;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Measurement Conference, 2009 73rd ARFTG
Conference_Location
Boston, MA
Print_ISBN
978-1-4244-3442-8
Electronic_ISBN
978-1-4244-3443-5
Type
conf
DOI
10.1109/ARFTG.2009.5278076
Filename
5278076
Link To Document