A 6-30 GHz Compact 3-bit Digital Attenuator MMIC using InP/InGaAs PIN Diodes

Author

Eom, Hyunchul ; Han, Sejun ; Yang, Kyounghoon

Author_Institution

Division of Electrical Engineering, School of Electrical Engineering and Computer Science (EECS), Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong, Yuseong-Gu, Daejeon, Republic of Korea

fYear

2008

Firstpage

101

Lastpage

103

Abstract

A broadband (6-30 GHz) 3-bit digital attenuator MMIC using InP/InGaAs PIN Diodes has been proposed and fabricated. The proposed digital attenuator is composed of Pi- resistive networks for non-reflective step attenuation and fabricated by using a benzocyclobutene(BCB)-based multi-layer MMIC technology. By using the InP/InGaAs PIN diodes having a high cutoff frequency for digital switching, the proposed digital attenuator has shown the low insertion loss and excellent return loss characteristics. The 3-bit digital attenuator has a 3 dB attenuation step and a 21 dB attenuation range. The minimum insertion loss is 4 dB and the input/output return loss is greater than 10 dB over all attenuation states and frequencies. The chip size is 1.47times0.99 mm².

Keywords

III-V semiconductors; MMIC; attenuators; gallium arsenide; gallium compounds; indium compounds; p-i-n diodes; InP-InGaAs; PIN diodes; benzocyclobutene; broadband digital attenuator; digital switching; frequency 6 GHz to 30 GHz; multilayer MMIC technology; nonreflective step attenuation; resistive networks; word length 3 bit; Attenuation; Attenuators; Circuits; Cutoff frequency; Diodes; Indium gallium arsenide; Indium phosphide; Insertion loss; MMICs; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves, 2008. GSMM 2008. Global Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1885-5

Electronic_ISBN

978-1-4244-1886-2

Type

conf

DOI

10.1109/GSMM.2008.4534569

Filename

4534569