Title :
Hyperabrupt-junction varactor for mmWave SiGe:C BiCMOS, enabling 77GHz VCO/TX with 13-15GHz tuning range
Author :
Trivedi, V.P. ; Kirchgessner, J. ; John, J.P. ; Welch, P. ; Morgan, D. ; Stewart, S. ; Peterman, R. ; Hammock, D. ; Nivison, J. ; Hartin, O. ; Shams, S. ; Lim, I. -S ; Li, H. ; Trotta, S. ; Salle, D. ; Huang, W.M.
Author_Institution :
Freescale Semicond. Inc., Tempe, AZ, USA
Abstract :
A millimeter-wave hyperabrupt-junction varactor (HAVAR) enabling 77 GHz VCO/TX with 13-15 GHz tuning range and better than -70 dBc/Hz phase noise at 100 kHz offset has been integrated in SiGe:C BiCMOS for automotive radar products. The HAVAR predominantly uses existing processes for low-cost integration and minimal process complexity. Optimization of TR-Q thru HAVAR width allows TR up to 2.7 and Qmin up to 10.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; millimetre wave integrated circuits; varactors; voltage-controlled oscillators; BiCMOS; SiGe:C; TR-Q thru HAVAR; VCO/TX; automotive radar products; frequency 100 kHz; frequency 13 GHz to 15 GHz; frequency 77 GHz; millimeter-wave hyperabrupt-junction varactor; BiCMOS integrated circuits; Implants; Junctions; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators; SiGe BiCMOS; VCO; hyperabrupt junction; millimeter wave technology; varactor;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667941
