Title :
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology
Author :
Trotta, Saverio ; Knapp, Herbert ; Aufinger, Klaus ; Meister, Thomas F. ; Bock, Josef ; Simburger, Werner ; Scholtz, Arpad L.
Author_Institution :
Infineon Technol. AG, Munich
Abstract :
This paper reports on the design, fabrication and characterization of a lumped broadband amplifier in SiGe bipolar technology. The measured differential gain is 20 dB with a 3-dB bandwidth of more than 84 GHz, which is the highest bandwidth reported so far for broadband SiGe bipolar amplifiers. The amplifier consumes a power of 990 mW at a supply of -5.5 V
Keywords :
Ge-Si alloys; bipolar integrated circuits; millimetre wave amplifiers; wideband amplifiers; -5.5 V; 20 dB; 84 GHz; 990 mW; SiGe; bipolar amplifiers; bipolar technology; lumped broadband amplifier; Bandwidth; Broadband amplifiers; Circuit synthesis; Differential amplifiers; Frequency dependence; Gain; Germanium silicon alloys; Impedance; Silicon germanium; Switches; SiGe; broadband amplifier;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319909
