Integrated III–V Heterostructure Barrier Varactor frequency tripler on a silicon substrate

Author

Malko, Aleksandra ; Bryllert, Tomas ; Vukusic, Josip ; Stake, Jan

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden

fYear

2012

Firstpage

516

Lastpage

519

Abstract

We report on the RF characterization of a monolithically integrated III-V Heterostructure Barrier Varactor (HBV) frequency tripler on a silicon substrate. A process of a low-temperature plasma-assisted bonding was introduced to transfer an InGaAs/InAlAs/AlAs HBV onto a silicon wafer. The frequency of operation for the presented frequency tripler is in the range of 96-108GHz. The maximum output power measured for the demonstrated device is 66mW, which corresponds to an efficiency of 10%.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; frequency multipliers; gallium arsenide; indium compounds; millimetre wave frequency convertors; silicon; varactors; III-V-HBV frequency tripler; InGaAs-InAlAs-AlAs; RF characterization; Si; efficiency 10 percent; frequency 96 GHz to 108 GHz; low-temperature plasma-assisted bonding; monolithically integrated III-V heterostructure barrier varactor frequency tripler; power 66 mW; silicon substrate; Indium gallium arsenide; Indium phosphide; Power generation; Semiconductor diodes; Silicon; Substrates; Epitaxial transfer; W-band; frequency tripler; heterostructure barrier varactor (HBV); millimeter wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483850