Title :
1 GHz microprocessor integration with high performance transistor and low RC delay
Author :
Jonghyon Ahn ; Hyun-Sik Kim ; Tae-Jin Kim ; Hyung-Ho Shin ; Young-Ho Kim ; Dong-Uk Lim ; Joon Kim ; Uin Chung ; Soo-Cheol Lee ; Kwang-Pyuk Suh
Author_Institution :
Samsung Electron. Co., Yongin, South Korea
Abstract :
This paper describes the process that enabled the development of the world´s first 1 GHz microprocessor that was implemented with 6-layer Al interconnections, low-k dielectrics as the interlayer materials to reduce RC delay, and high-performance transistors having L/sub eff/ of 0.1 /spl mu/m. These enhancements were the key in producing the 1 GHz 64-bit RISC microprocessor that operates at 1.9 V and 80/spl deg/C at which the junction temperature is measured at 135/spl deg/C.
Keywords :
CMOS digital integrated circuits; delays; low-power electronics; microprocessor chips; reduced instruction set computing; very high speed integrated circuits; 0.1 micron; 1 GHz; 1.9 V; 135 C; 64 bit; 80 C; Al; Alpha RISC microprocessor; CMOS technology; RC delay reduction; high-performance transistors; interlayer dielectric material; loading capacitance reduction; low-k dielectrics; microprocessor integration; six-layer Al interconnections; CMOS technology; Chemical technology; Clocks; Delay; Frequency; Microprocessors; Parasitic capacitance; Plugs; Reduced instruction set computing; Tungsten;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824244
