Title :
Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz
Author :
Shyh-Chiang Shen ; Feng, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
A novel low-voltage radio-frequency microelectromechanical system (RF MEMS) switch is reported. The device switching voltages are 14-17 volts. When the device is operated in an ´on´ state, an insertion loss of less than 0.5 dB with a return loss of -15 dB at 40 GHz was measured. When operated in its ´off´ state, an isolation of better than 27 dB over the frequency band from 0.25 GHz to 40 GHz was achieved. The RF MEMS switch equivalent circuit model shows that the ´on´ resistance is 0.3 /spl Omega/ and the ´off´ capacitance is 90 fF, which results in a figure of merit of 6000 GHz.
Keywords :
MMIC; UHF integrated circuits; equivalent circuits; losses; low-power electronics; microactuators; microwave switches; semiconductor switches; -15 dB; 0.25 to 40 GHz; 0.3 ohm; 14 to 17 V; 90 fF; RF MEMS switches; actuation voltage; device switching voltages; equivalent circuit model; figure of merit; insertion loss; low-voltage switches; radio-frequency microelectromechanical system; return loss; signal frequencies; Electrical resistance measurement; Insertion loss; Loss measurement; Low voltage; Microelectromechanical systems; RF signals; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Switching circuits;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824245