DocumentCode :
1645071
Title :
High-current test-bench for thyristor-based semiconductors
Author :
Voss, Johannes ; Sarregui, Garrikoitz ; Rossbach, Fabian ; De Doncker, Rik W. ; Ubillos, Ander
Author_Institution :
PGS - Inst. for Power Generation & Storage Syst., RWTH Aachen Univ., Aachen, Germany
fYear :
2015
Firstpage :
1122
Lastpage :
1129
Abstract :
Increasingly thyristor-based converters (e.g. FACTS) are being integrated in the grids, to stabilize the distribution and transmission grids, due to the high power handling-capability of these semiconductor devices. Nevertheless, during faults, these converters need to withstand high circulating currents without failing. To investigate these scenarios, this paper presents a test bench to simulate different failure modes in a controlled environment. This test bench is able to generate symmetrical and asymmetrical sinusoidal currents up to 20 kA with a maximum duration of two seconds. Directly after the high current event, the voltage blocking capability of the thyristor is tested, by measuring the leakage current of the device under test under high voltage conditions (DUT).
Keywords :
failure analysis; leakage currents; semiconductor device testing; thyristor convertors; FACTS; circulating current; device under test; failure mode; high-current test-bench; leakage current; power handling-capability; semiconductor device; sinusoidal current; thyristor converter; thyristor-based semiconductor; transmission grid; voltage blocking capability; Current measurement; Insulated gate bipolar transistors; Junctions; Supercapacitors; Switching frequency; Thyristors; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Drive Systems (PEDS), 2015 IEEE 11th International Conference on
Conference_Location :
Sydney, NSW
Type :
conf
DOI :
10.1109/PEDS.2015.7203583
Filename :
7203583
Link To Document :
بازگشت