Title :
A compact V-band active SiGe power detector
Author :
Jian Zhang ; Fusco, Vincent ; Yunhua Zhang
Author_Institution :
Inst. of Electron., Commun. & Inf. Technol. (ECIT), Queen´s Univ. of Belfast, Belfast, UK
Abstract :
A compact V-band active power detector using Infineon 0.35 μm SiGe HBT process (fT/fmax =170/250 GHz) is described. The total chip area is only 0.35×0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.
Keywords :
Ge-Si alloys; amplitude shift keying; demodulators; detector circuits; heterojunction bipolar transistors; low-power electronics; Infineon HBT process; OOK-ASK; SiGe; compact V-band active power detector; envelop detector; frequency 170 GHz; frequency 250 GHz; frequency 55 GHz to 67 GHz; low-power application; multi-Gbps high data rate demodulators; size 0.35 mum; Detectors; Frequency measurement; Microwave integrated circuits; Power measurement; Silicon germanium; Transistors; Voltage measurement; MMIC microwave millimeterwave power detector; OOK/ASK; SiGe HBT;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
