Title :
A fully integrated 4.8-6 GHz power amplifier with on-chip output balun in 38 GHz-f/sub T/ Si-bipolar
Author :
Bakalski, W. ; Simburger, W. ; Thuringer, R. ; Wohlmuth, H.-D. ; Scholtz, A.L.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
A fully integrated radio frequency power amplifier for 4.8-6 GHz has been realized in a 38 GHz-f/sub T/, 0.25 /spl mu/m-Si-BiCMOS technology. The balanced 2-stage push-pull power amplifier uses two on-chip transformers as input balun and for interstage matching and an LC-type output balun with planar inductors. With this output network no external elements are required. At 1.2 V, 1.5 V, 2 V supply voltages output powers of 17 dBm, 18.9 dBm, 20.7 dBm are achieved at 5.8 GHz. The small-signal gain is 23 dB.
Keywords :
BiCMOS analogue integrated circuits; MMIC power amplifiers; baluns; differential amplifiers; elemental semiconductors; silicon; 0.25 micron; 1.2 V; 1.5 V; 2 V; 23 dB; 38 GHz; 4.8 to 6 GHz; LC-type output balun; Si; Si-BiCMOS technology; balanced 2-stage push-pull power amplifier; interstage matching; on-chip output balun; output powers; planar inductors; power amplifier; small-signal gain; Capacitors; Circuits; Impedance matching; Low voltage; Paper technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transformers;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212467
