A fully integrated 4.8-6 GHz power amplifier with on-chip output balun in 38 GHz-f/sub T/ Si-bipolar

Author

Bakalski, W. ; Simburger, W. ; Thuringer, R. ; Wohlmuth, H.-D. ; Scholtz, A.L.

Author_Institution

Infineon Technol. AG, Munich, Germany

Volume

2

fYear

2003

Firstpage

695

Abstract

A fully integrated radio frequency power amplifier for 4.8-6 GHz has been realized in a 38 GHz-f/sub T/, 0.25 /spl mu/m-Si-BiCMOS technology. The balanced 2-stage push-pull power amplifier uses two on-chip transformers as input balun and for interstage matching and an LC-type output balun with planar inductors. With this output network no external elements are required. At 1.2 V, 1.5 V, 2 V supply voltages output powers of 17 dBm, 18.9 dBm, 20.7 dBm are achieved at 5.8 GHz. The small-signal gain is 23 dB.

Keywords

BiCMOS analogue integrated circuits; MMIC power amplifiers; baluns; differential amplifiers; elemental semiconductors; silicon; 0.25 micron; 1.2 V; 1.5 V; 2 V; 23 dB; 38 GHz; 4.8 to 6 GHz; LC-type output balun; Si; Si-BiCMOS technology; balanced 2-stage push-pull power amplifier; interstage matching; on-chip output balun; output powers; planar inductors; power amplifier; small-signal gain; Capacitors; Circuits; Impedance matching; Low voltage; Paper technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212467

Filename

1212467