Title :
Microwave-Frequency InAlP-oxide/GaAs MOSFETs
Author :
Cao, Y. ; Zhang, J. ; Kosel, T.H. ; Hall, D.C. ; Fay, P.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN
Abstract :
GaAs-channel MOSFETs employing InAlP native oxide gate dielectrics and achieving record microwave performance are reported. Devices with 1 mum gate length demonstrate measured ft´s of 17.0 GHz with fmax´s of 74.8 GHz. Improved RF performance is obtained by vertical scaling of the device heterostructure to incorporate a 7.5 nm thick gate oxide layer. Despite the thin InAlP native oxide gate dielectric layer, a low gate leakage current density of 1.58 times 10 -4 A/cm2 is obtained at 1 V bias
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; high-k dielectric thin films; indium compounds; 1 V; 1 micron; 17 GHz; 7.5 nm; 74.8 GHz; InAlP-GaAs; low gate leakage current density; microwave-frequency InAlP-oxide/GaAs MOSFET; oxide gate dielectrics; vertical scaling; Dielectrics and electrical insulation; Gallium arsenide; High speed optical techniques; Leakage current; Lithography; MOSFETs; Microwave devices; Neodymium; Photonic band gap; Wet etching;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319874
