DocumentCode
1645217
Title
Co-silicide formation on silicon FEAs from Co, Co/Ti and Ti/Co layers
Author
Byung Chang Shim ; Byung-Gook Park ; Jong Duk Lee
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
fYear
1999
Firstpage
709
Lastpage
712
Abstract
For enhancement and stabilization of electron emission, Co-silicides were formed from Co, Co/Ti and Ti/Co layers on silicon FEAs. The uniform and smooth Co-silicide layer can be obtained by depositing Co and Ti on silicon tips in order and rapid annealing. Best results were yielded from Ti/Co bi-layer, because Ti prevents oxygen adsorption on the Co film during silicidation. Compared with pure silicon field emitters, the silicide FEAs formed from Ti/Co layer exhibited a significant improvement in maximum emission current, stability and failure voltage.
Keywords
electron field emission; elemental semiconductors; rapid thermal annealing; silicon; vacuum microelectronics; Co; Co-Ti; Co/Ti bilayer; CoSi/sub 2/; Si; Ti-Co; cobalt silicide formation; electron emission; fabrication; rapid thermal annealing; silicon FEA; Annealing; Anodes; Rough surfaces; Scanning electron microscopy; Silicides; Silicon; Surface morphology; Surface roughness; Voltage; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.824250
Filename
824250
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