Title :
A Ka-band High Power Frequency Doubler in SMT Package
Author :
Nam, Sang-Min ; Traut, Frank ; Cuggino, Joe
Author_Institution :
Hittite Microwave Corp., Chelmsford, MA
Abstract :
This paper describes the development of a packaged Ka-band high power frequency doubler. The frequency doubler MMIC is developed using 0.15mum GaAs p-HEMT technology and packaged into a low cost QFN package for SMT application. This packaged frequency doubler delivers above +22dBm saturated output power of the 2nd harmonic signal with greater than 60dBc rejection of the fundamental and 3rd harmonic signal across the 28 to 30GHz band
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; frequency multipliers; gallium arsenide; integrated circuit packaging; surface mount technology; 0.15 micron; GaAs; Ka-band high power frequency doubler; MMIC; QFN package; SMT package; p-HEMT technology; Costs; Frequency; MMICs; Millimeter wave technology; Packaging; Power generation; Power harmonic filters; Power system harmonics; Surface-mount technology; Transceivers; Frequency doubler; GaAs p-HEMT; Ka-band VSAT; QFN package;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319878
