• DocumentCode
    1645344
  • Title

    Low voltage tunneling in ultra-thin oxides: a monitor for interface states and degradation

  • Author

    Ghetti, A. ; Sangiorgi, E. ; Bude, J. ; Sorsch, T.W. ; Weber, G.

  • Author_Institution
    Bell Lab., Lucent Technol., Murray Hill, NJ, USA
  • fYear
    1999
  • Firstpage
    731
  • Lastpage
    734
  • Abstract
    In this paper we report data on NMOS devices with ultra thin oxide (t/sub ox/=2 nm) and heavily doped substrates, showing, for the first time, that the gate current, for very low biases (-|V/sub FB/|\n\n\t\t
  • Keywords
    MOSFET; heavily doped semiconductors; insulating thin films; semiconductor device reliability; tunnelling; 2 nm; NMOS devices; anode interface states; biases; gate current; gate electron tunneling; heavily doped substrates; oxide degradation; ultra-thin oxides; Anodes; Current measurement; Electrons; Interface states; Low voltage; MOS devices; Monitoring; State estimation; Stress measurement; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-5410-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1999.824255
  • Filename
    824255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1645344