Title :
Light emission from MOS tunnel diodes
Author :
Versari, R. ; Pieracci, A. ; Manfredi, Marco ; Soncini, G. ; Bellutti, P. ; Ricci, Bruno
Author_Institution :
Bologna Univ., Italy
Abstract :
Special MOS tunneling structures which, avoiding the obscuring effects of the polysilicon layer, exhibit excellent light emission characteristics, have been fabricated and tested. For the first time, it is shown that the experimental photon energy distributions of MOS tunnel diodes biased in the Fowler-Nordheim regime exhibit a peak at about 1.6 eV, likely due to hot-carrier radiative recombination phenomena.
Keywords :
MIS devices; electron-hole recombination; elemental semiconductors; hot carriers; photodiodes; silicon; tunnel diodes; 1.6 eV; Fowler-Nordheim regime; MOS tunnel diodes; MOS tunneling structures; Si; hot-carrier radiative recombination phenomena; light emission characteristics; photon energy distributions; Anodes; Cathodes; Diodes; Electron emission; Hot carriers; Materials testing; Physics; Radiative recombination; Silicon devices; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824258
