Light emission and detection by metal oxide silicon tunneling diodes

Author

Liu, C.W. ; Lee, M.H. ; Lin, C.F. ; Lin, I.C. ; Liu, W.T. ; Lin, H.H.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1999

Firstpage

749

Lastpage

752

Abstract

Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000/spl deg/C) of the oxide can reduce the dark current to a level as low as 3 nA/cm/sup 2/.

Keywords

MIS devices; dark conductivity; inversion layers; light emitting diodes; minority carriers; photodetectors; photodiodes; semiconductor device models; semiconductor plasma; tunnel diodes; NMOS; PMOS; Si; bandgap reduction; dark current; electron-hole plasma model; emission spectra; growth temperature; inversion layer; light-emitting diodes; metal oxide silicon tunneling diodes; minority carrier; photodetectors; surface band bending; thermal generation; tunneling gate; ultrathin gate oxide; Dark current; Light emitting diodes; MOS devices; Photodetectors; Photonic band gap; Plasma devices; Plasma temperature; Silicon; Surface fitting; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824259

Filename

824259