Title :
Light emission and detection by metal oxide silicon tunneling diodes
Author :
Liu, C.W. ; Lee, M.H. ; Lin, C.F. ; Lin, I.C. ; Liu, W.T. ; Lin, H.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Both NMOS and PMOS light-emitting diodes and photodetectors are demonstrated. For the ultrathin gate oxide, the tunneling gate of metal oxide silicon (MOS) diodes can be utilized as both emitters for light emitting devices and collectors for light detectors. An electron-hole plasma model is used to fit the emission spectra. A surface band bending is responsible for the bandgap reduction in electroluminescence (EL) from the MOS tunneling diode. The dark current of the photodetectors is limited by the thermal generation of minority carrier in the inversion layer. The high growth temperature (1000/spl deg/C) of the oxide can reduce the dark current to a level as low as 3 nA/cm/sup 2/.
Keywords :
MIS devices; dark conductivity; inversion layers; light emitting diodes; minority carriers; photodetectors; photodiodes; semiconductor device models; semiconductor plasma; tunnel diodes; NMOS; PMOS; Si; bandgap reduction; dark current; electron-hole plasma model; emission spectra; growth temperature; inversion layer; light-emitting diodes; metal oxide silicon tunneling diodes; minority carrier; photodetectors; surface band bending; thermal generation; tunneling gate; ultrathin gate oxide; Dark current; Light emitting diodes; MOS devices; Photodetectors; Photonic band gap; Plasma devices; Plasma temperature; Silicon; Surface fitting; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824259
