Title :
Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs
Author :
Lacave, T. ; Chevalier, P. ; Campidelli, Y. ; Buczko, M. ; Depoyan, L. ; Berthier, L. ; Avenier, G. ; Gaquiére, C. ; Chantre, A.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper summarizes the work carried out on the vertical profile of double-polysilicon SiGe:C HBTs to get fMAX above 400 GHz. The effects of the final spike annealing temperature, the emitter doping species, the base and collector doping levels and the Si capping layer thickness are presented and discussed.
Keywords :
annealing; heterojunction bipolar transistors; semiconductor doping; HBT; SiGe:C; base doping level; collector doping level; double polysilicon; emitter doping; heterojunction bipolar transistor; spike annealing temperature; vertical profile optimization; Annealing; Bismuth; Boron; Doping; Resistance; Silicon; Silicon germanium; Heterojunction bipolar transistors (HBT); Nanotechnology; Silicon Germanium (SiGe);
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667965
