DocumentCode
1645553
Title
Implication of baseband impedance and bias for FET amplifier linearization
Author
Brinkhoff, J. ; Parker, A.E.
Author_Institution
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Volume
2
fYear
2003
Firstpage
781
Abstract
Baseband impedance can have a positive or negative effect on the intermodulation of microwave circuits. Concise formulae are shown to be useful to a designer to select intelligently a FET and its bias on the basis of the impact of baseband impedance on intermodulation. Memoryless predistortion techniques are shown to be effective over wide bandwidths at a suitable bias.
Keywords
intermodulation distortion; linearisation techniques; microwave amplifiers; microwave field effect transistors; FET amplifier; baseband impedance; bias dependence; intermodulation distortion; memoryless predistortion linearization; microwave circuit; Bandwidth; Baseband; Broadband amplifiers; Feedback; Frequency; Impedance; Microwave FETs; Microwave circuits; Predistortion; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1212487
Filename
1212487
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