Title :
CoSi/sub 2/ integrated fuses on poly silicon for low voltage 0.18 /spl mu/m CMOS applications
Author :
Kalnitsky, A. ; Saadat, I. ; Bergemont, A. ; Francis, P.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
The manufacturability and integration of the CoSi/sub 2//poly-Si fuse element for sub-0.18 /spl mu/m regime CMOS is demonstrated and evaluated. This paper addresses the mechanism and the driver circuit challenges for fuse programming (given the low operating voltage nature of the 0.18 /spl mu/m technology). This includes exploring different options to deliver the required programming energy, yet complying with low voltage limitation of the technology. Finally, it concludes by presenting the fuse programming characteristics and reliability studies of the high voltage (HV) driver of the circuit.
Keywords :
CMOS integrated circuits; cobalt compounds; driver circuits; electric fuses; integrated circuit layout; integrated circuit reliability; low-power electronics; 0.18 mum; 3.5 V; 5 V; CoSi/sub 2/ integrated fuses; CoSi/sub 2/-Si; driver circuit challenges; fuse programming; high voltage driver; low operating voltage; low voltage CMOS; manufacturability; polysilicon; programming energy; reliability; CMOS technology; Dielectric materials; Driver circuits; Fuses; Immune system; Low voltage; MOSFETs; Resistors; Schottky diodes; Silicon;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824263
