InP-based high-speed electronics

Author

Nakajima, H. ; Ishibashi, T. ; Sano, E. ; Ida, M. ; Yamahata, S. ; Ishii, Y.

Author_Institution

NTT Photonics Labs., Kanagawa, Japan

fYear

1999

Firstpage

771

Lastpage

774

Abstract

InP/InGaAs heterostructure bipolar transistor (HBT) technology, including the fabrication process, reliability, modeling, and circuit applications, is described. A 40-Gbit/s error-free decision IC and a 72-GHz 4:1 dynamic frequency divider IC fabricated using the HBTs are presented. A photoreceiver and an optoelectronic demultiplexer circuit for 80-Gbit/s operation using InP/InGaAs uni-traveling-carrier photodiodes (UTC-PDs) are also described.

Keywords

III-V semiconductors; bipolar integrated circuits; decision circuits; demultiplexing equipment; frequency dividers; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit technology; optical communication equipment; photodiodes; semiconductor device reliability; time division multiplexing; 40 Gbit/s; 72 GHz; 80 Gbit/s; InP-InGaAs; InP/InGaAs HBT technology; InP/InGaAs uni-traveling-carrier photodiodes; circuit applications; device reliability; dynamic frequency divider IC; error-free decision IC; fabrication process; heterostructure bipolar transistor; high-rate TDM systems; high-speed electronics; modeling; optoelectronic demultiplexer circuit; photoreceiver; Circuits; Electrons; HEMTs; Heterojunction bipolar transistors; High-speed electronics; Indium phosphide; Laboratories; MODFETs; Optical device fabrication; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824264

Filename

824264