DocumentCode
1645590
Title
A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE
Author
Schmelzer, David ; Long, Stephen I.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
fYear
2006
Firstpage
96
Lastpage
99
Abstract
A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an output power of 16.5 W. An output power and drain efficiency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-state resistance, is explored. A comparison between Class F and inverse F, given particular operating conditions for this device, are made
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; hybrid integrated circuits; microwave power amplifiers; printed circuits; wide band gap semiconductors; 16.5 W; 2 GHz; GaN; HEMT; PAE; class F amplifier; hybrid PCB; inverse F; Capacitance; Circuits; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Impedance; Power amplifiers; Power generation; Voltage; Class F; GaN HEMT; Inverse F;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location
San Antonio, TX
Print_ISBN
1-4244-0126-7
Electronic_ISBN
1-4244-0127-5
Type
conf
DOI
10.1109/CSICS.2006.319923
Filename
4109989
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