Title :
Transient voltage overshoots of high voltage ESD protections based on bipolar transistors in smart power technology
Author :
Delmas, A. ; Gendron, A. ; Bafleur, M. ; Nolhier, N. ; Gill, C.
Author_Institution :
Freescale Semiconducteur, Toulouse, France
Abstract :
Transient voltage overshoots of a high voltage (20 V) ESD clamp based on bipolar transistors in a smart power technology are studied using different TLP pulse conditions (rise time, voltage amplitude). The physical mechanisms involved during the ESD clamp turn-on are thoroughly analyzed by the mean of TCAD simulations, allowing the definition of a set of design guidelines for the overshoot reduction.
Keywords :
bipolar transistors; electrostatic discharge; overvoltage protection; power integrated circuits; transients; TLP pulse conditions; bipolar transistors; high voltage ESD protections; smart power technology; transient voltage overshoots; Clamps; Current measurement; Electrostatic discharge; Junctions; Transient analysis; Transmission line measurements; Voltage measurement; Electrostatic discharges (ESD); bipolar simulation; device physics; smart power technologies;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667967
