Measurement based modeling of power amplifiers for reliable design of modern communication systems

The characterization and the modeling of nonlinear memory effects are, nowadays, an integral part of the design process of modern communication systems. Notably, the nonlinear long term memory effects occurring in solid state devices impact considerably system performances. Recently, a new method to characterize and integrate low frequency memory effects in nonlinear behavioral models of SSPAs has been presented. This paper presents a detailed mathematical study and a measurement based extraction principle of the proposed behavioral model. Calibrated time-domain envelope measurements are used for the model extraction and verification procedures. The extraction technique is illustrated by the modeling of a L-Band HFET amplifier.