Title :
A low energy drive for high power 300 A-1000 V IGBT
Author :
Jaafari, Alain ; Bergogne, Dominique
Author_Institution :
Equipe d´´Electron. de Puissance, Univ. Blaise Pascal, Aubiere, France
Abstract :
A new concept for the IGBT (insulated gate bipolar transistor) drive circuit is described. This driver requires few components and draws little power. It is totally insulated, making it very interesting for building inverter legs. The driver performs well over the 50 Hz to 500 kHz range (more than is needed for IGBT-based power converters). Bistable operation allows for a very small pulse transformer even in the bottom end frequencies. The driving energy is transferred to the IGBT input capacity in a resonant mode. A prototype was built, and circuit operation is shown on oscilloscope plots
Keywords :
insulated gate bipolar transistors; invertors; power convertors; power transistors; 1000 V; 300 A; 50 Hz to 500 kHz; IGBT; drive circuit; insulated gate bipolar transistor; inverter legs; power converters; power transistors; pulse transformer; resonant mode; Driver circuits; Frequency; Insulated gate bipolar transistors; Inverters; Leg; Oscilloscopes; Power transformer insulation; Prototypes; Pulse transformers; Resonance;
Conference_Titel :
Industrial Electronics Society, 1990. IECON '90., 16th Annual Conference of IEEE
Conference_Location :
Pacific Grove, CA
Print_ISBN :
0-87942-600-4
DOI :
10.1109/IECON.1990.149289
