DocumentCode
1645626
Title
A low energy drive for high power 300 A-1000 V IGBT
Author
Jaafari, Alain ; Bergogne, Dominique
Author_Institution
Equipe d´´Electron. de Puissance, Univ. Blaise Pascal, Aubiere, France
fYear
1990
Firstpage
1090
Abstract
A new concept for the IGBT (insulated gate bipolar transistor) drive circuit is described. This driver requires few components and draws little power. It is totally insulated, making it very interesting for building inverter legs. The driver performs well over the 50 Hz to 500 kHz range (more than is needed for IGBT-based power converters). Bistable operation allows for a very small pulse transformer even in the bottom end frequencies. The driving energy is transferred to the IGBT input capacity in a resonant mode. A prototype was built, and circuit operation is shown on oscilloscope plots
Keywords
insulated gate bipolar transistors; invertors; power convertors; power transistors; 1000 V; 300 A; 50 Hz to 500 kHz; IGBT; drive circuit; insulated gate bipolar transistor; inverter legs; power converters; power transistors; pulse transformer; resonant mode; Driver circuits; Frequency; Insulated gate bipolar transistors; Inverters; Leg; Oscilloscopes; Power transformer insulation; Prototypes; Pulse transformers; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 1990. IECON '90., 16th Annual Conference of IEEE
Conference_Location
Pacific Grove, CA
Print_ISBN
0-87942-600-4
Type
conf
DOI
10.1109/IECON.1990.149289
Filename
149289
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