Title :
CBC8: A 0.25 µm SiGe-CBiCMOS technology platform on thick-film SOI for high-performance analog and RF IC design
Author :
Babcock, Jeff A. ; Cestra, Greg ; Van Noort, Wibo ; Allard, Paul ; Ruby, Scott ; Tao, Jon ; Malone, Robert ; Buchholz, Alan ; Lavrovskaya, Natasha ; Yindeepol, Wipawan ; Printy, Craig ; Ramdani, Jamal ; Labonte, Andre ; McCulloh, Heather ; Leng, Yaojian ;
Author_Institution :
Nat. Semicond., Santa Clara, CA, USA
Abstract :
A production released complementary-SiGe BiCMOS technology on SOI has been developed for high speed analog and RFIC applications. It features matched SiGe:C PNP and NPN transistors. The PNP shows cutting edge performance metrics with β·VA = 17,000 and near record fT·BVCEO ≥ 195GHz·V for a 5V process while demonstrating best in class linearity on a fully differential amplifier design. A modular process flow was leveraged to enhance the Analog design needs for the platform. For higher-speed lower power, we also demonstrate a low voltage SiGe NPN with peak fT of 50 GHz at low-bias (VCE = 0.5V), ideal for load line drive. Finally, we discuss core CMOS devices which utilize a dual-gate oxide process for improved mixed-signal mixed-voltage design and better optimization of digital blocks.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; integrated circuit design; radiofrequency integrated circuits; silicon-on-insulator; CBC8; CBiCMOS technology platform; NPN transistors; PNP transistors; RF IC design; SiGe:P; analog IC design; analog design; digital blocks; dual-gate oxide process; frequency 50 GHz; fully differential amplifier design; mixed-signal mixed-voltage design; size 0.25 mum; thick-film SOI; voltage 5 V; CMOS integrated circuits; Current measurement; Frequency measurement; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Voltage measurement;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667971
