A high performance, low complexity 14V Complementary BiCMOS process built on bulk silicon

Author

Thibeault, Todd ; Preisler, Edward ; Zheng, Jie ; Lao, Lynn ; Hurwitz, Paul ; Racanelli, Marco

Author_Institution

Jazz Semicond., Inc., Newport Beach, CA, USA

fYear

2010

Firstpage

45

Lastpage

48

Abstract

This paper details a new 14V Complementary BiCMOS (CBiCMOS) addition to the TowerJazz SBC35 family of BiCMOS technologies. The SBC35 family previously supported BV_ceo values up to 6V. The bipolar architecture is nearly identical with that used in the lower voltage technologies, leveraging 10 years of manufacturing history. The complementary bipolar transistors are paired with 5V CMOS currently available in our SBC35 family. This technology offers high RF performance 14V NPN transistors and PNP transistors with low process complexity. The paper describes a simplified process flow, results of optimization, and a demonstration of the key device performance metrics.

Keywords

BiCMOS integrated circuits; bipolar transistors; circuit optimisation; elemental semiconductors; silicon; NPN transistors; PNP transistors; Si; TowerJazz SBC35 family; bipolar architecture; bulk silicon; complementary BiCMOS process; complementary bipolar transistors; manufacturing history; optimization; voltage 14 V; voltage 5 V; BiCMOS integrated circuits; CMOS integrated circuits; Implants; Optimization; Performance evaluation; Silicon; Silicon germanium; Complementary BiCMOS technology; DSL driver application; SiGe NPN; silicon VPNP;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE

Conference_Location

Austin, TX

ISSN

1088-9299

Print_ISBN

978-1-4244-8578-9

Type

conf

DOI

10.1109/BIPOL.2010.5667972

Filename

5667972