Advanced amorphous dielectrics for embedded capacitors

Author

Alers, G.B. ; van Dover, R.B. ; Schneemeyer, L.F. ; Stirling, L. ; Sung, C.Y. ; Diodato, P.W. ; Liu, R. ; Wong, Y.H. ; Fleming, R.M. ; Lang, D.V. ; Chang, J.P.

Author_Institution

Lucent Technol., Bell Labs., Murray Hill, NJ, USA

fYear

1999

Firstpage

797

Lastpage

800

Abstract

New classes of high dielectric constant materials based on binary and ternary amorphous metal oxides will be discussed. These films are compatible with low temperature processing within the metal layers of a circuit and can therefore be used with conventional metal electrodes like TiN. Different classes of mixed metal oxides will be discussed that are based on alloys of tantalum oxide and titanium oxide.

Keywords

DRAM chips; amorphous state; capacitance; capacitors; dielectric thin films; embedded systems; leakage currents; permittivity; Ta/sub 2/O/sub 5/; Ti-Dy-O; Zr-Sn-Ti-O; amorphous dielectrics; binary amorphous metal oxides; charge storage capacity; embedded DRAM; embedded capacitors; high dielectric constant materials; high-density DRAM circuits; intrinsic charge storage time; leakage current; low temperature processing; metal layers; mixed metal oxides; ternary amorphous metal oxides; Amorphous materials; Capacitors; Circuits; Dielectric materials; Electrodes; High-K gate dielectrics; Inorganic materials; Temperature; Tin; Titanium alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824270

Filename

824270