Title :
Advanced thermally stable silicide S/D electrodes for high-speed logic circuits with large-scale embedded Ta/sub 2/O/sub 5/-capacitor DRAMs
Author :
Saito, M. ; Yoshida, M. ; Asaka, K. ; Goto, H. ; Fukuda, N. ; Kawano, M. ; Kojima, M. ; Suzuki, M. ; Ogaya, K. ; Enomoto, H. ; Hotta, K. ; Sakai, S. ; Asakura, H. ; Fukuda, T. ; Sekiguchi, T. ; Takakura, T. ; Kobayashi, N.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
A process that enables good gate-oxide integrity (GOI) in W/barrier/poly-Si gates and thermally stable low-resistivity source/drain (S/D) CoSi/sub 2/ electrodes has been developed for high-speed logic circuits with large-scale embedded DRAMs that use Ta/sub 2/O/sub 5/ high-k capacitors for high-density memory cells. Spin-on-glass (SOG)-based films were used to fill in narrow spaces between wordlines, and were also directly formed on silicide films. We prevented the oxidation of silicide during the SOG-based interlayer dielectric (ILD) formation. By using these CoSi/sub 2/ electrodes, we were able to obtain contact resistance ten times lower than that of conventional non-silicide electrodes.
Keywords :
CMOS logic circuits; DRAM chips; cobalt compounds; contact resistance; dielectric thin films; electrodes; embedded systems; high-speed integrated circuits; integrated circuit interconnections; integrated circuit metallisation; spin coating; thermal stability; 800 C; CMOS devices; CoSi/sub 2/; CoSi/sub 2/ electrodes; SOG-based interlayer dielectric formation; Ta/sub 2/O/sub 5/; Ta/sub 2/O/sub 5/ high-k capacitors; W-Si; W/barrier/poly-Si gates; contact resistance; gate-oxide integrity; high-density memory cells; high-speed logic circuits; large-scale embedded Ta/sub 2/O/sub 5/-capacitor DRAMs; silicide films; silicide oxidation prevention; spin-on-glass-based films; thermally stable low-resistivity source/drain electrodes; thermally stable silicide S/D electrodes; Capacitors; Contact resistance; Electrodes; High K dielectric materials; High-K gate dielectrics; Large-scale systems; Logic circuits; Oxidation; Silicides; Temperature;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824272
