Title :
2 and 4 watt Ka-band GaAs PHEMT power amplifier MMICs
Author :
Colomb, F.Y. ; Platzker, A.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
The design and performance of power amplifiers for Ka-band applications is presented. A three-stage amplifier demonstrated 22 dB small signal gain from 26.5 GHz to 31.5 GHz and saturated output power of 4W with 28% power added efficiency from 28 GHz to 31 GHz. Record power density of 670 mW per mm of device output periphery was achieved. The amplifiers were fabricated on a selective double-recess 0.2 /spl mu/m GaAs power pHEMT process.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; 0.2 micron; 2 W; 22 dB; 26.5 to 31.5 GHz; 28 percent; 4 W; GaAs; GaAs PHEMT power amplifier MMIC; Ka-band; output power; power added efficiency; power density; small-signal gain; three-stage amplifier; Gallium arsenide; Impedance matching; MMICs; PHEMTs; Power amplifiers; Power generation; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212501
