Author_Institution :
Fiber Commun. Div., Maxim Inc., Austin, TX
Abstract :
Notice of Violation of IEEE Publication Principles
"Low Voltage 12.5Gb/s SiGe BiCMOS Laser Diode Driver Using a Bias Current Modulation Canceling Technique"
>by Maxim, A.
in the Proceedings of the 2006 IEEE Compound Semiconductor Integrated Circuit Symposium,
Nov. 2006 Page(s):141 - 144
After careful and considered review, it has been determined that the above paper is in violation of IEEE\´s Publication Principles.
Specifically, the paper contains information that Adrian Maxim admits had been falsified. In response to an inquiry on this misconduct, Mr. Maxim acknowledged that the following people who have been listed as co-authors on several of his papers are fabricated names and that he is the only author:
C. Turinici, D. Smith, S. Dupue, M. Gheorge, R. Johns, D. Antrik
Additionally, in papers by Mr. Maxim that have co-authors other than those listed above, it was discovered in some cases that he had not consulted with them while writing the papers, and submitted papers without their knowledge.
Although Mr. Maxim maintains that not all of the data is falsified, IEEE nevertheless cannot assure the integrity of papers posted by him because of his repeated false statements.
Due to the nature of this violation, reasonable effort should be made to remove all past references to the above paper, and to refrain from any future references.A low supply voltage fully-integrated 12.5Gb/s laser diode driver IC was realized in a 0.2mum 60GHz fT SiGe BiCMOS process. A three-fold power consumption reduction versus existing drivers was achieved by using a 3.3V supply and dynamic emitter followers having a local positive feedback loop that boosts the drive strength without taking additional supply power. Low voltage operation was achieved by replacing the tail current source of the output switch with a resistor and setting the current with a common-mode feedback loop. A direct on-chip summation of bias and modula- ion currents was realized by using a bias modulation canceling circuit. Laser diode driver IC specifications include: 3-3.6V supply voltage, <70mA supply current (excluding output current), 20-100mA modulation current range, 1-100mA bias current range, <12psp-p deterministic jitter and 1.5times1.5mm2 die area
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; circuit feedback; driver circuits; semiconductor lasers; 0.2 micron; 1 to 100 mA; 12.5 Gbits/s; 3 to 3.6 V; 60 GHz; BiCMOS laser diode driver; SiGe; bias current modulation canceling technique; bias currents; common-mode feedback loop; direct on-chip summation; driver integrated circuit; dynamic emitter followers; local positive feedback loop; modulation currents; tail current source; three-fold power consumption reduction; BiCMOS integrated circuits; Diode lasers; Driver circuits; Feedback loop; Germanium silicon alloys; Low voltage; Notice of Violation; Silicon germanium; Switches; SONET; SiGe; laser diode driver;
