Title :
E-PHEMT, single supply, power amplifier for Ku band applications
Author :
Fujii, K. ; Morkner, H.
Abstract :
The development of enhancement mode PHEMT (E-PHEMT), single supply, 10.5 to 18GHz wide band power amplifier MMICs is described. The amplifier was designed with prematching techniques utilizing a 0.5/spl mu/m GaAs E-PHEMT production process. The designed power amplifier exhibit 13 dB of small signal gain, 26.5dBm 1dB gain compression output power at 16 GHz. This MMIC was fabricated in Agilent´s advanced E-PHEMT process and have been demonstrated in fully production capability.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; wideband amplifiers; 0.5 micron; 10.5 to 18 GHz; 13 dB; E-PHEMT MMIC; Ku-band; output power; prematching technique; single-supply wideband power amplifier; small-signal gain; Broadband amplifiers; Circuits; Costs; FETs; Intrusion detection; MMICs; PHEMTs; Power amplifiers; Power supplies; Production;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212505
