Author :
Mahnkopf, R. ; Allers, K.-H. ; Armacost, M. ; Augustin, A. ; Barth, J. ; Brase, G. ; Busch, R. ; Demm, E. ; Dietz, G. ; Flietner, B. ; Friese, G. ; Grellner, F. ; Han, K. ; Hannon, R. ; Ho, H. ; Hoinkis, M. ; Holloway, K. ; Hook, T. ; Iyer, S. ; Kim, P. ;
Abstract :
A 0.18 /spl mu/m high performance/low power technology platform is described which allows ´system on a chip integration´ for a broad spectrum of products. Based on a generic digital process additional modules can be added in a modular and cost effective-manner for mixed signal as well as for eDRAM applications offering a maximum of flexibility for product designers. For mixed signal applications a precision metal-insulator-metal capacitor (MIMCAP) was developed. This is for the first time a realization of a metal-insulator-metal capacitor in a copper dual damascene metallization scheme.
Keywords :
DRAM chips; MIM devices; capacitors; digital integrated circuits; integrated circuit metallisation; low-power electronics; mixed analogue-digital integrated circuits; 0.18 micron; Cu; copper dual damascene metallization; digital circuit; eDRAM; low power design; metal-insulator-metal capacitor; mixed signal circuit; system-on-a-chip technology; Copper; Fuses; Isolation technology; MIM capacitors; MOSFET circuits; Metal-insulator structures; Microelectronics; Power MOSFET; Power lasers; Random access memory;
